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the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and spec ifying it in the "find what:" field. preliminary data sheet nesg3033m14 npn sige rf transistor for low noise, high-gain amplification 4-pin lead-less minimold (m14, 1208 pkg) features ? the nesg3033m14 is an ideal choice fo r low noise, high-gain amplification nf = 0.6 db typ. @ v ce = 2 v, i c = 6 ma, f = 2.0 ghz ? maximum stable power gain: msg = 20.5 db typ. @ v ce = 2 v, i c = 15 ma, f = 2.0 ghz ? sige hbt technology (uhs3) adopted: f max = 110 ghz ? this product is improvem ent of esd of nesg3032m14. ? 4-pin lead-less minimold (m14, 1208 pkg) ordering information part number order number package quantity supplying form nesg3033m14 nesg3033m14-a 50 pcs (non reel) nesg3033m14-t3 nesg3033m14-t3-a 4-pin lead-less minimold (m14, 1208 pkg) (pb-free) 10 kpcs/reel ? 8 mm wide embossed taping ? pin 1 (collector), pin 4 (nc) face the perforation side of the tape remark to order evaluation samples, please contact your nearby sales office. unit sample quantity is 50 pcs. absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo note 1 5.0 v collector to emitter voltage v ceo 4.3 v base current i b note 1 12 ma collector current i c 35 ma total power dissipation p tot note 2 150 mw junction temperature t j 150 c storage temperature t stg ? 65 to +150 c notes 1. v cbo and i b are limited by the permissible cu rrent of the protection element. 2. mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pwb caution observe precautions when handling because these devic es are sensitive to el ectrostatic discharge. r09ds0049ej0300 rev.3.00 sep 14, 2012 r09ds0049ej0300 rev.3.00 page 1 of 14 sep 14, 2012
recommended operating range (t a = +25 c) parameter symbol min. typ. max. unit input power p in ? ? 0 dbm base feedback resister r b ? ? 100 k remark when the voltage return bias circuit like the figure below is used, a current increase is seen because the esd protection element is turned on when recommended range of motion in the above table is exceeded. however, there is no influence of reliability, including deterioration. r b bias choke nesg3033m14 r09ds0049ej0300 rev.3.00 page 2 of 14 sep 14, 2012
electrical characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ? ? 100 na emitter cut-off current i ebo v eb = 1 v, i c = 0 ? ? 100 na dc current gain h fe note 1 v ce = 2 v, i c = 6 ma 220 300 380 ? rf characteristics insertion power gain ? s 21e ? 2 v ce = 2 v, i c = 15 ma, f = 2.0 ghz 15.0 17.5 ? db noise figure nf v ce = 2 v, i c = 6 ma, f = 2.0 ghz, z s = z sopt , z l = z lopt ? 0.60 0.85 db associated gain g a v ce = 2 v, i c = 6 ma, f = 2.0 ghz, z s = z sopt , z l = z lopt ? 17.5 ? db reverse transfer capacitance c re note 2 v cb = 2 v, i e = 0, f = 1 mhz ? 0.15 0.25 pf maximum stable power gain msg note 3 v ce = 2 v, i c = 15 ma, f = 2.0 ghz 17.5 20.5 ? db gain 1 db compression output power p o (1 db) v ce = 3 v, i c (set) = 20 ma, f = 2.0 ghz, z s = z sopt , z l = z lopt ? 12.5 ? dbm 3rd order intermodulation distortion output intercept point oip 3 v ce = 3 v, i c (set) = 20 ma, f = 2.0 ghz, z s = z sopt , z l = z lopt ? 24.0 ? dbm notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacit ance when the emitter grounded 3. msg = h fe classification rank fb/yfb marking zl h fe value 220 to 380 s 21 s 12 nesg3033m14 r09ds0049ej0300 rev.3.00 page 3 of 14 sep 14, 2012
typical characteristics (t a = +25 c, unless otherwise specified) 250 200 150 100 50 0 25 50 75 100 125 150 f = 1 mhz 0.3 0.2 0.1 012345 v ce = 1 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 3 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 2 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 35 i b = 20 a 120 a 200 a 140 a 160 a 180 a 80 a 60 a 40 a 100 a 40 20 25 30 15 5 10 012345 mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) total power dissipation p tot (mw) ambient temperature t a (?c) total power dissipation vs. ambient temperature reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage collector current i c (ma) base to emitter voltage v be (v) base to emitter voltage collector current vs. collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage remark the graphs indicate nominal characteristics. nesg3033m14 r09ds0049ej0300 rev.3.00 page 4 of 14 sep 14, 2012
1 000 100 10 1 0.1 10 100 v ce = 1 v 1 000 100 10 1 0.1 10 100 v ce = 3 v 1 000 100 10 1 0.1 10 100 v ce = 2 v dc current gain h fe collector current i c (ma) dc current gain vs. collector current dc current gain h fe collector current i c (ma) dc current gain vs. collector current dc current gain h fe collector current i c (ma) dc current gain vs. collector current remark the graphs indicate nominal characteristics. nesg3033m14 r09ds0049ej0300 rev.3.00 page 5 of 14 sep 14, 2012
v ce = 3 v f = 2 ghz 30 5 10 15 20 25 0 10 1 100 v ce = 1 v i c = 15 ma 40 35 30 25 20 15 10 5 0 0.1 1 10 100 mag msg |s 21e | 2 v ce = 3 v i c = 15 ma 40 35 30 25 20 15 10 5 0 0.1 1 10 100 mag msg |s 21e | 2 v ce = 2 v i c = 15 ma 40 35 30 25 20 15 10 5 0 0.1 1 10 100 mag msg |s 21e | 2 msg mag msg mag msg mag gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) v ce = 1 v f = 2 ghz 30 5 10 15 20 25 0 10 1 100 v ce = 2 v f = 2 ghz 30 5 10 15 20 25 0 10 1 100 remark the graphs indicate nominal characteristics. nesg3033m14 r09ds0049ej0300 rev.3.00 page 6 of 14 sep 14, 2012
v ce = 1 v f = 3 ghz |s 21e | 2 30 25 20 15 10 5 0 1 10 100 mag msg collector current i c (ma) insertion power gain, msg vs. collector current insertion power gain |s 21e | 2 (db) collector current i c (ma) collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) maximum stable power gain msg (db) insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) insertion power gain, mag, msg vs. collector current collector current i c (ma) insertion power gain, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum stable power gain msg (db) v ce = 1 v f = 0.5 ghz msg |s 21e | 2 30 25 20 15 10 5 0 1 10 100 v ce = 1 v f = 2 ghz mag msg |s 21e | 2 30 25 20 15 10 5 0 1 10 100 v ce = 1 v f = 1 ghz mag msg |s 21e | 2 30 25 20 15 10 5 0 1 10 100 v ce = 2 v f = 0.5 ghz msg |s 21e | 2 30 25 20 15 10 5 0 1 10 100 v ce = 1 v f = 5 ghz 25 20 15 10 5 0 ? 1 10 100 mag |s 21e | 2 remark the graphs indicate nominal characteristics. nesg3033m14 r09ds0049ej0300 rev.3.00 page 7 of 14 sep 14, 2012
v ce = 3 v f = 0.5 ghz msg |s 21e | 2 30 25 20 15 10 5 0 1 10 100 collector current i c (ma) insertion power gain, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum stable power gain msg (db) v ce = 2 v f = 1 ghz msg |s 21e | 2 30 25 20 15 10 5 0 1 10 100 v ce = 3 v f = 1 ghz |s 21e | 2 msg 30 25 20 15 10 5 0 1 10 100 v ce = 2 v f = 5 ghz mag |s 21e | 2 30 25 20 15 10 5 0 1 10 100 v ce = 2 v f = 2 ghz |s 21e | 2 30 25 20 15 10 5 0 1 10 100 mag msg v ce = 2 v f = 3 ghz |s 21e | 2 30 25 20 15 10 5 0 1 10 100 mag msg remark the graphs indicate nominal characteristics. nesg3033m14 r09ds0049ej0300 rev.3.00 page 8 of 14 sep 14, 2012
collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) v ce = 3 v f = 3 ghz |s 21e | 2 30 25 20 15 10 5 0 1 10 100 mag msg v ce = 3 v f = 5 ghz |s 21e | 2 30 25 20 15 10 5 0 1 10 100 mag v ce = 3 v f = 2 ghz |s 21e | 2 30 25 20 15 10 5 0 1 10 100 mag msg remark the graphs indicate nominal characteristics. nesg3033m14 r09ds0049ej0300 rev.3.00 page 9 of 14 sep 14, 2012
20 15 10 5 0 ? 50 40 10 20 30 0 ?0 ?0 ? 0 ?5 5 p out i c v ce = 3 v, f = 2 ghz i cq = 20 ma (rf off) input power p in (dbm) output power, collector current vs. input power output power p out (dbm) collector current i c (ma) measuring method : measured at power matched with exte rnal sleeve tuner. (the load resistance is not inserted between the base dc power supply and bias tee.) collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) 4 2 1 3 0 20 5 10 15 0 1 10 100 v ce = 2 v f = 2 ghz g a nf remark the graphs indicate nominal characteristics. s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/ nesg3033m14 r09ds0049ej0300 rev.3.00 page 10 of 14 sep 14, 2012
evaluation circuit example (f = 1.575 ghz lna) c1 c3 r1 l1 r3 c4 r2 l2 c2 tr. (nesg3033m14) gnd v cc nesg3033m14 gps_lna in notes 1. 15 24 mm, t = 0.2 mm double sided copper clad glass epoxy pwb. 2. au plated on pattern 3. : through holes nesg3033m14 r09ds0049ej0300 rev.3.00 page 11 of 14 sep 14, 2012
evaluation circuit (f = 1.575 ghz lna) in c3 l1 out c2 v cc l2 c4 c1 r1 10 000 pf 5.6 nh 82 k 10 000 pf r3 3.9 nh r2 62 5.6 3 v 10 000 pf 6 pf microstrip w = 0.15 mm l = 0.5 mm 2 the application circuits and their parameters are for reference only and are not intended for use in actual design-ins. component list symbol parts part number maker value c1, c3, c4 chip capacitor grm155b31h103ka88 murata 10 000 pf c2 chip capacitor grm1552c1h6r0dz01 murata 6 pf l1 chip inductor aml1005h5n6sts fdk 5.6 nh l2 chip inductor aml1005h3n9sts fdk 3.9 nh r1 chip resistor mcr01mzpj823 rohm 82 k r2 chip resistor MCR01MZPJ5R6 rohm 5.6 r3 chip resistor mcr01mzpj620 rohm 62 nesg3033m14 r09ds0049ej0300 rev.3.00 page 12 of 14 sep 14, 2012
example of characteristics for 1.575 ghz lna evaluation board electrical characteristics (t a = +25 c, v cc = 3 v, i c = 6.1 ma, f = 1.575 ghz) parameter symbol value unit noise figure nf 0.72 db gain g a 17.3 db input return loss rl in 10.3 db output return loss rl out 14.2 db gain 1 db compression output power p o (1 db) ? 0.3 dbm input 3rd order distortion interception point iip 3 0.7 dbm typical characteristics (t a = +25 c, unless otherwise specified) v cc = 3 v, f = 1.575 ghz i cq = 6.1 ma (rf off) 15 10 5 0 ? ?0 25 20 5 10 15 0 ?5 ?0 ? 0 ?5 5 p out i c ?0 note input power p in (dbm) output power, collector current vs. input power output power p out (dbm) collector current i c (ma) 40 ? 80 ? 60 ? 40 ? 20 0 20 ? 30 ? 20 ? 10 010 p out im 3 iip 3 = 0.7 dbm v cc = 3 v, i c = 6.1 ma f1in = 1.575 ghz, f2in = 1.576 ghz output power p out (dbm) 3rd order intermodulation distortion im 3 (dbm) output power, im 3 vs. input power input power p in (dbm) note a current increase is seen because the esd protection element is turned on. however, there is no influence of deterioration etc. on reliability. remark the graph indicates nominal characteristics. nesg3033m14 r09ds0049ej0300 rev.3.00 page 13 of 14 sep 14, 2012
package dimensions 4-pin lead-less minimold (m 14, 1208 pkg) (unit: mm) pin connections 1. collector 2. emitter 3. base 4. nc (connected with pin 2) note zl 0.5?.05 0.11 +0.1 ?.05 0.2 0.2 1.2 +0.07 ?.05 0.8 0.8 +0.07 ?.05 1.0?.05 0.15?.05 43 12 (bottom view) note a nc pin is non-connection in the mold package (when nc-pi n is open state, it will get an influences of floating capacitance. therefore, we recommend that nc pin connect to emitter pin). nesg3033m14 r09ds0049ej0300 rev.3.00 page 14 of 14 sep 14, 2012
revision history nesg3033m14 data sheet description rev. date page summary 1.00 jul 19, 2005 ? first edition issued 2.00 sep 11, 2007 ? second edition issued 3.00 sep 14, 2012 throughout the co mpany name is changed to renesas electronics corporation. p.1 modification of ordering information p.3 modification of electrical characteristics p.3 modification of h fe classification p.10 modification of met hod for obtaining s-parameters p.12 modification of evalution circuit p.12 modification of component list p.13 modification of example of characteristics for f = 1.575 ghz lna evaluation board p.14 modification of package dimensions all trademarks and registered tr ademarks are the property of their respective owners. c - 1
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